高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: New type of Fano resonant tunneling via Anderson impurities in superlattice
作者: Xu SJ;  Xiong SJ;  Liu J;  Zheng HZ
发表日期: 2006
摘要: The spectrum of differential tunneling conductance in Si-doped GaAs/AlAs superlattice is measured at low electric fields. The conductance spectra feature a zero-bias peak and a low-bias dip at low temperatures. By taking into account the quantum interference between tunneling paths via superlattice miniband and via Coulomb blockade levels of impurities, we theoretically show that such a peak-dip structure is attributed to a Fano resonance where the peak always appears at the zero bias and the line shape is essentially described by a new function \xi\/\xi\+1 with the asymmetry parameter q approximate to 0. As the temperature increases, the peak-dip structure fades out due to thermal fluctuations. Good agreement between experiment and theory enables us to distinguish the zero-bias resonance from the usual Kondo resonance.
KOS主题词: Electric field;  Superlattices as materials;  Localization
刊名: EUROPHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
3276.pdf168KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Xu SJ; Xiong SJ; Liu J; Zheng HZ .New type of Fano resonant tunneling via Anderson impurities in superlattice ,EUROPHYSICS LETTERS,2006,74(5):875-881
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Xu SJ]的文章
 [Xiong SJ]的文章
 [Liu J]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Xu SJ]的文章
 [Xiong SJ]的文章
 [Liu J]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发