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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD
作者: Zhao Q;  Pan JQ;  Zhang J;  Zhou F;  Wang BJ;  Wang LF;  Bian J;  An X;  Zhao LJ;  Wang W
发表日期: 2006
摘要: High quality InGaAsP/InGaAsP multiple quantum wells ( MQWs) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation (15-30 mu m). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect W the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.
KOS主题词: Epitaxy
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao Q; Pan JQ; Zhang J; Zhou F; Wang BJ; Wang LF; Bian J; An X; Zhao LJ; Wang W .High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD ,ACTA PHYSICA SINICA,2006,55(6):2982-2985
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