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题名: Investigation of Mn-doped Si films prepared by magnetron cosputtering
作者: Liu LF;  Chen NF;  Wang Y;  Yin ZG;  Yang F;  Chai CL;  Zhang X
发表日期: 2006
摘要: Mn-doped Si films were prepared on Si(001) substrates by magnetron cosputtering and post-annealing process. The structural, morphological and magnetic properties of the films have been investigated. X-ray diffraction results show that the as-prepared film is amorphous. By annealing at 800 degrees C, however, the film is crystallized. There is no secondary phase found except Si in the two films. Chemical mapping shows that no segregation of the Mn atoms appears in the annealed film. Atomic force microscopy images of the films indicate that the annealed film has a granular feature that covers uniformly the film surface while there is no such kind of characteristic in the as-prepared film. The field dependence of magnetization was measured using an alternating gradient magnetometer, and it has been indicated that the annealed film shows room-temperature ferromagnetism. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Ion beam lithography;  Thin films;  Semiconductors;  Development;  Ferromagnetism;  Spintronics
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liu LF; Chen NF; Wang Y; Yin ZG; Yang F; Chai CL; Zhang X .Investigation of Mn-doped Si films prepared by magnetron cosputtering ,JOURNAL OF CRYSTAL GROWTH,2006,291(1):239-242
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