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题名: Electron g factors and optical properties of InAs quantum ellipsoids
作者: Zhang XW;  Zhu YH;  Xia JB
发表日期: 2006
摘要: The electronic structure, electron g factors and optical properties of InAs quantum ellipsoids are investigated, in the framework of the eight-band effective-mass approximation. It is found that the light-hole states come down in comparison with the heavy-hole states when the spheres are elongated, and become the lowest states of the valence band. Circularly polarized emissions under circularly polarized excitations may have opposite polarization factors to the exciting light. For InAs ellipsoids the length, which is smaller than 35 nm, is still in a strongly quantum-confined regime. The electron g factors of InAs spheres decrease with increasing radius, and are nearly 2 when the radius is very small. The quantization of the electron states quenches the orbital angular momentum of the states. Actually, as some of the three dimensions increase, the electron g factors decrease. As more dimensions increase, the g factors decrease more. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension. The magnetic field along the z axis of the crystal structure causes linearly polarized emissions in the spheres, which emit unpolarized light in the absence of magnetic field.
KOS主题词: displacement control;  level structure;  mechanism;  EVOLUTION;  Bars (Engineering)
刊名: JOURNAL OF PHYSICS-CONDENSED MATTER
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhang XW; Zhu YH; Xia JB .Electron g factors and optical properties of InAs quantum ellipsoids ,JOURNAL OF PHYSICS-CONDENSED MATTER,2006,18(20):4945-4954
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