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题名: Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate
作者: Wan KS (Wan Keshu);  Porporati AA (Porporati Alessandro Alan);  Feng G (Feng Gan);  Yang H (Yang Hui);  Pezzotti G (Pezzotti Giuseppe)
发表日期: 2006
摘要: The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (GaN) was determined as Pi=-25.8 +/- 0.2 meV/GPa. A controlled biaxial stress field was applied on a hexagonal GaN film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. This calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of GaN. The main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. The ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate. (c) 2006 American Institute of Physics.
KOS主题词: Nitrides
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wan KS (Wan Keshu); Porporati AA (Porporati Alessandro Alan); Feng G (Feng Gan); Yang H (Yang Hui); Pezzotti G (Pezzotti Giuseppe) .Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate ,APPLIED PHYSICS LETTERS,2006,88(25):Art.No.251910
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