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题名: AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs
作者: Feng W;  Pan JQ;  Yang H;  Hou LP;  Zhou F;  Zhao LJ;  Zhu HL;  Wang W
发表日期: 2006
摘要: We have performed a narrow stripe selective growth of oxide-free A1GaInAs waveguides on InP substrates patterned with pairs of SiO2 mask stripes under optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed at 1.5, 2.5 or 3.5 mu m. Flat and smooth A1GaInAs waveguides covered by specific InP layers are successfully grown on substrates patterned with different mask designs. The thickness enhancement ratio and the photoluminescence (PL) spectrum of the A1GaInAs narrow stripe waveguides are strongly dependent on the mask stripe width and the window region width. In particular, a large PL wavelength shift of 79 nm and a PL FWHM of less than 64 meV are obtained simultaneously with a small mask stripe width varying from 0 to 40 mu m when the window region width is 1.5 mu m. We present some possible interpretations of the experimental observations in considering both the migration effect from a masked region and the lateral vapour diffusion effect.
KOS主题词: Vapor phase epitaxy;  Semiconductor lasers;  quantum cascade lasers;  Layers
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Feng W; Pan JQ; Yang H; Hou LP; Zhou F; Zhao LJ; Zhu HL; Wang W .AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2006,39(11):2330-2334
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