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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission
作者: Zhao Q;  Pan JQ;  Zhang J;  Li BX;  Zhou F;  Wang BJ;  Wang LF;  Zhao LJ;  Zhou GT;  Wang W
发表日期: 2006
摘要: Details of the design, fabrication and testing of a strained InGaAsP/InGaAsP multiple quantum well (MQW) electroabsorption modulator (EAM) monolithically integrated with a DFB laser by ultra-low-pressure selective area growth (SAG) are presented. The method greatly simplifies the integration process. A study of the controllability of band-gap energy by SAG has been performed. After being completely packaged in a seven-pin butterfly compact module, the device successfully performs 10 Gb s(-1) nonreturn to zero (NRZ) operation on uncompensated transmission span >53 km in a standard fibre with a 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at a bit error rate (BER) of 10(-10) is confirmed. 10 GHz short pulse trains with 15.3 ps pulsewidth have also been generated.
KOS主题词: Vapor phase epitaxy;  Layers;  diode;  atomic layer deposition
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao Q; Pan JQ; Zhang J; Li BX; Zhou F; Wang BJ; Wang LF; Zhao LJ; Zhou GT; Wang W .MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(6):734-739
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