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题名: Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
作者: Xu Y (Xu Ying);  Hu ZH (Hu Zhihua);  Diao HW (Diao Hongwei);  Cai Y (Cai Yi);  Zhang SB (Zhang Shibin);  Zeng XB (Zeng Xiangbo);  Hao HY (Hao Huiying);  Liao XB (Liao Xianbo);  Fortunato E (Fortunato Elvira);  Martins R (Martins Rodrigo)
发表日期: 2006
摘要: Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Silicon;  Solar cells;  solar generators;  Heterojunctions;  Nanocrystals;  Layer
刊名: JOURNAL OF NON-CRYSTALLINE SOLIDS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Xu Y (Xu Ying); Hu ZH (Hu Zhihua); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Zeng XB (Zeng Xiangbo); Hao HY (Hao Huiying); Liao XB (Liao Xianbo); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo) .Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers ,JOURNAL OF NON-CRYSTALLINE SOLIDS,2006 ,352(9-20):1972-1975
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