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题名: Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
作者: Liao XB (Liao Xianbo);  Du WH (Du Wenhui);  Yang XS (Yang Xiesen);  Povolny H (Povolny Henry);  Xiang XB (Xiang Xianbi);  Deng XM (Deng Xunming);  Sun K (Sun Kai)
发表日期: 2006
摘要: The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Amorphous semiconductors;  Solar cells;  solar generators;  Microstructure;  open circuit voltage;  Seismic discontinuities;  Photography--Films;  Finite volume method
刊名: JOURNAL OF NON-CRYSTALLINE SOLIDS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liao XB (Liao Xianbo); Du WH (Du Wenhui); Yang XS (Yang Xiesen); Povolny H (Povolny Henry); Xiang XB (Xiang Xianbi); Deng XM (Deng Xunming); Sun K (Sun Kai) .Nanostructure in the p-layer and its impacts on amorphous silicon solar cells ,JOURNAL OF NON-CRYSTALLINE SOLIDS,2006 ,352(9-20):1841-1846
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