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题名: Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures
作者: Kong LM (Kong Lingmin);  Cai JF (Cai Jiafa);  Wu ZY (Wu Zhengyun);  Gong Z (Gong Zheng);  Fang ZD (Fang Zhidan);  Niu ZC (Niu Zhichuan)
发表日期: 2006
摘要: The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled quantum dots (QDs) grown by molecular-beam epitaxy ( MBE) were investigated. The emission wavelength of 1317 nm was obtained by embedding InAs QDs in InGAs/GgAs quantum well. The temperature-dependent and timed-resolved photoluminescence (TDPL and TRPL) were used to study the dynamic characteristics of carriers. InGaAs cap layer may improve the quality of quantum dots for the strain relaxation around QDs, which results in a stronger PL intensity and an increase of PL peak lifetime up to 170 K. We found that InGaAs buffer layer may reduce the PL peak lifetime of InAs QDs, which is due to the buffer layer accelerating the carrier migration. The results also show that InGaAs cap layer can increase the temperature point when, the thermal reemission and nonradiative recombination contribute significantly to the carrier dynamics.
KOS主题词: Lasers;  Development;  WAVELENGTH;  emission;  Islands;  Layers;  Size;  Dimensions
刊名: JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Kong LM (Kong Lingmin); Cai JF (Cai Jiafa); Wu ZY (Wu Zhengyun); Gong Z (Gong Zheng); Fang ZD (Fang Zhidan); Niu ZC (Niu Zhichuan) .Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures ,JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION,2006,21(2):76-79
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