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题名: Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
作者: Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.)
发表日期: 2006
摘要: The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.
KOS主题词: Microscopy;  Silicon carbide;  Dislocations;  Photography--Films;  Finite volume method
刊名: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) .Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces ,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2006 ,9(1-3):275-278
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