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题名: Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
作者: Feng W (Feng W.);  Pan JQ (Pan J. Q.);  Zhou F (Zhou F.);  Yang H (Yang H.);  Zhao LJ (Zhao L. J.);  Zhu HL (Zhu H. L.);  Wang W (Wang W.)
发表日期: 2006
摘要: Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs multiple quantum wells (MQWs) has been successfully performed on patterned InP substrates by ultra-low pressure MOVPE. Flat and clear interfaces were obtained for the narrow stripe selectively grown MQWs under optimized growth conditions. These selectively grown MQWs were covered by specific InP layers, which can keep the MQWs from being oxidized during the fabrication of the devices. The characteristics of selectively grown MQWs were strongly dependent on the mask stripe width. In particular, a PL peak wavelength shift of 73 nm, a PL intensity of more than 57% and a PL FWHM of less than 102 meV were observed simultaneously with a small mask stripe width varying from 0 to 40 mu m. The results were explained by considering the migration effect from the masked region (MMR) and the lateral vapour diffusion effect (LVD).
KOS主题词: Vapor phase epitaxy;  Semiconductor lasers;  Layers
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Feng W (Feng W.); Pan JQ (Pan J. Q.); Zhou F (Zhou F.); Yang H (Yang H.); Zhao LJ (Zhao L. J.); Zhu HL (Zhu H. L.); Wang W (Wang W.) .Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(7):841-845
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