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题名: Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors
作者: Li DL (Li Dong-Lin);  Zeng YP (Zeng Yi-Ping)
发表日期: 2006
摘要: The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method. Variation of 2DEG concentration in different subband of the quantum well is discussed in detail. Calculated results show that sheet electron concentration of 2DEG in the channel is affected slightly by the thickness of the channel. But the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. When the size of channel lies between 20-25 nm, the number of electrons occupying the second subband reaches the maximum. This result can be used in parameter design of materials and devices.
KOS主题词: Modulation-doped field-effect transistors;  Transport properties;  Quantum wells;  FREQUENCY;  Density
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) .Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors ,ACTA PHYSICA SINICA,2006,55(7):3677-3682
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