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题名: Photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well
作者: Hu B (Hu Bing);  Zhou X (Zhou Xia);  Tang Y (Tang Yan);  Gan HD (Gan Huadong);  Zhu H (Zhu Hui);  Li GR (Li Guirong);  Zheng HZ (Zheng Houzhi)
发表日期: 2006
摘要: We report the photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well. When this quantum dots-quantum well hybrid heterostructure is biased beyond + 1 or -I V, the photocurrent response manifests itself as a steplike enhancement, increasing linearly with the light intensity. Most probably, at proper bias condition, the pulling down of the X minimum of GaAs at the outgoing interface of the emitter barrier by the photovoltaic effect in GaAs QW will initiate the r,-X-X tunneling at much lower bias as compared with that in the dark. That gives rise to the observed photocurrent response. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Photovoltaic effect
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Hu B (Hu Bing); Zhou X (Zhou Xia); Tang Y (Tang Yan); Gan HD (Gan Huadong); Zhu H (Zhu Hui); Li GR (Li Guirong); Zheng HZ (Zheng Houzhi) .Photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2006,33(2):355-358
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