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题名: Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)
作者: Zhao HQ (Zhao Hong-Quan);  Yu LJ (Yu Li-Juan);  Huang YZ (Huang Yong-Zhen)
发表日期: 2006
摘要: An n-InP-based InGaAsP multiple-quantum-well wafer was bonded with p-Si by chemical surface activated bonding at 70 degrees C, and then annealed at 450 degrees C. Different thermal expansion coefficients between InP and Si will induce thermal stresses in the bonded wafer. Planar and cross-sectional distributions of thermal stress in the bonded InP-Si pairs were analyzed by a two-dimensional finite element method. In addition, the normal, peeling, and shear stresses were calculated by an analytic method. Furthermore, x-ray double crystalline diffraction was applied to measure the thermal strain and the strain caused by the mismatching of the crystalline orientation between InP (100) and Si (100). The wavelength redshift of the photoluminescence (PL) spectrum due to thermal strain was investigated via the calculation of the band structure, which is in agreement with the measured PL spectra.
KOS主题词: room temperature;  Surface;  crystal;  Gallium arsenide;  Technology;  Water-power;  Force and energy;  Photography--Films;  Finite volume method
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen) .Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100) ,JOURNAL OF APPLIED PHYSICS,2006 ,100(2):Art.No.023513
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