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题名: Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
作者: Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.)
发表日期: 2006
摘要: A series of 1-mu m-thick undoped In0.53Ga0.47As with different substrate growth temperature (T-g) or different beam flux pressure (BFP) of As were grown on lattice-matched semi-insulating InP (001) substrates by molecular beam epitaxy (MBE). Van der Pauw Hall measurements were carried out for these In0.53Ga0.47As samples. The residual electron concentration decreased with increasing temperature from 77 to 140 K, but increased with increasing temperature from 140 to 300 K. Rapid thermal annealing (RTA) can reduce the residual electron concentration. The residual electron mobility increased with increasing temperature from 77 to 300 K. All these electrical properties are associated with As antisite defects. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: characterization;  Point defects;  atomic layer deposition;  Quantum wells;  Temperature;  Gallium arsenide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) .Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2006 ,293(2):291-293
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