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题名: Measurement of threading dislocation densities in GaN by wet chemical etching
作者: Chen J;  Wang JF;  Wang H;  Zhu JJ;  Zhang SM;  Zhao DG;  Jiang DS;  Yang H;  Jahn U;  Ploog KH
发表日期: 2006
摘要: We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid on the etched surfaces. The large etch pits are attributed to screw/mixed TDs and the small ones to edge TDs, according to their locations on the surface and Burgers vectors of TDs. Additionally, the origin of small etch pits is confirmed by a transmission electron microscopy. The difference in the size of etch pits is discussed in view of their origin and merging. Overetching at elevated temperatures or for a long time may result in merging of individual etch pits and underestimating of the density of TDs. Wet chemical etching has also been proved efficient in revealing the distribution of TDs in epitaxial lateral overgrowth GaN.
KOS主题词: X-ray crystallography
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen J (Chen J.); Wang JF (Wang J. F.); Wang H (Wang H.); Zhu JJ (Zhu J. J.); Zhang SM (Zhang S. M.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Jahn U (Jahn U.); Ploog KH (Ploog K. H.) .Measurement of threading dislocation densities in GaN by wet chemical etching ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(9):1229-1235
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