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题名: Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer
作者: Wang JF (Wang Jian-Feng);  Zhang BS (Zhang Bao-Shun);  Zhang JC (Zhang Ji-Cai);  Zhu JJ (Zhu Jian-Jun);  Wang YT (Wang Yu-Tian);  Chen J (Chen Jun);  Liu W (Liu Wei);  Jiang DS (Jiang De-Sheng);  Yao DZ (Yao Duan-Zheng);  Yang H (Yang Hui)
发表日期: 2006
摘要: GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  EVOLUTION;  Density;  Silicon;  Residual stresses;  Stress (mechanics);  Photoelasticity;  Thermal stresses;  Metric system;  Silicon
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) .Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer ,CHINESE PHYSICS LETTERS,2006,23(9):2591-2594
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