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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing
作者: Zhao H (Zhao Huan);  Xu YQ (Xu Ying-Qiang);  Ni HQ (Ni Hai-Qiao);  Han Q (Han Qin);  Wu RH (Wu Rong-Han);  Niu ZC (Niu Zhi-Chuan)
发表日期: 2006
摘要: We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering process may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.
KOS主题词: atomic layer deposition;  Origin
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) .Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing ,CHINESE PHYSICS LETTERS,2006,23(9):2579-2582
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