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题名: Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells
作者: Sun Z (Sun Zheng);  Wang BR (Wang Bao-Rui);  Xu ZY (Xu Zhong-Ying);  Sun BQ (Sun Bao-Quan);  Ji Y (Ji Yang);  Ni HQ (Ni Hai-Qiao);  Niu ZC (Niu Zhi-Chuan)
发表日期: 2006
摘要: The nonradiative recombination effect on carrier dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence (TRPL) and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well stimulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.
KOS主题词: atomic layer deposition
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Sun Z (Sun Zheng); Wang BR (Wang Bao-Rui); Xu ZY (Xu Zhong-Ying); Sun BQ (Sun Bao-Quan); Ji Y (Ji Yang); Ni HQ (Ni Hai-Qiao); Niu ZC (Niu Zhi-Chuan) .Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells ,CHINESE PHYSICS LETTERS,2006,23(9):2566-2569
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