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题名: As-doped p-type ZnO films by sputtering and thermal diffusion process
作者: Wang P (Wang Peng);  Chen NF (Chen Nuofu);  Yin ZG (Yin Zhigang);  Yang F (Yang Fei);  Peng CT (Peng Changtao);  Dai RX (Dai Ruixuan);  Bai YM (Bai Yiming)
发表日期: 2006
摘要: As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. Moreover, the hole concentration of As-doped p-type ZnO was very impressible to the oxygen ambient applied during the annealing process. In addition, the bonding state of As in the films was investigated by x-ray photoelectron spectroscopy. This study not only demonstrated an effective method for reliable and reproducible p-type ZnO fabrication but also helped to understand the doping mechanism of As-doped ZnO. (c) 2006 American Institute of Physics.
KOS主题词: FABRICATION;  sedimentation;  Layers;  Oxides
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang P (Wang Peng); Chen NF (Chen Nuofu); Yin ZG (Yin Zhigang); Yang F (Yang Fei); Peng CT (Peng Changtao); Dai RX (Dai Ruixuan); Bai YM (Bai Yiming) .As-doped p-type ZnO films by sputtering and thermal diffusion process ,JOURNAL OF APPLIED PHYSICS,2006 ,100(4):Art.No.043704
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