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题名: Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser
作者: Liu J (Liu Jie);  Wang CX (Wang Chunxing);  Tian WM (Tian Wenmiao);  Liu SH (Liu Shihua);  Wang GG (Wang Guanggang);  Wang YG (Wang Yonggang)
发表日期: 2006
摘要: A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz.
KOS主题词: PASSIVE MODE LOCKING;  mirror;  Cavity
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu J (Liu Jie); Wang CX (Wang Chunxing); Tian WM (Tian Wenmiao); Liu SH (Liu Shihua); Wang GG (Wang Guanggang); Wang YG (Wang Yonggang) .Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,2006,45(8A):6268-6270
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