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题名: Nanocrystalline silicon films with high conductivity and the application for PIN solar cells
作者: Min C (Cui Min);  Zhang WJ (Zhang Weija);  Wang TM (Wang Tianmin);  Jin F (Jin Fei);  Li GH (Li Guohua);  Ding K (Ding Kun)
发表日期: 2006
摘要: Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films' microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9 x 10(0)Omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)Omega(-1)cm(-1). And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n(+)-nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V-oc was 534.7 mV, short-circuit current I-sc was 49.24 mA (3 cm(2)) and fill factor FF was 0.4228. (c) 2006 Elsevier Ltd. All rights reserved.
KOS主题词: Thermal conductivity;  electric conduction;  Photography--Films;  Finite volume method;  Solar cells;  solar generators
刊名: VACUUM
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Min C (Cui Min); Zhang WJ (Zhang Weija); Wang TM (Wang Tianmin); Jin F (Jin Fei); Li GH (Li Guohua); Ding K (Ding Kun) .Nanocrystalline silicon films with high conductivity and the application for PIN solar cells ,VACUUM,2006 ,81(1):126-128
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