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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
作者: Ma L (Ma Long);  Huang YL (Huang Ying-Long);  Zhang Y (Zhang Yang);  Yang FH (Yang Fu-Hua);  Wang LC (Wang Liang-Chen)
发表日期: 2006
摘要: This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy ( MBE) in turn on a GaAs substrate. An Al0.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-mu m gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.
刊名: CHINESE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Yang FH (Yang Fu-Hua); Wang LC (Wang Liang-Chen) .A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor ,CHINESE PHYSICS,2006,15(10):2422-2426
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