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题名: Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
作者: Liang S (Liang S.);  Zhu HL (Zhu H. L.);  Ye XL (Ye X. L.);  Wang W (Wang W.)
发表日期: 2006
摘要: The influence of GaAS(1 0 0)2 degrees substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality. (c) 2005 Elsevier B.V All rights reserved.
KOS主题词: Photoluminescence;  Quantum dots;  Indium arsenide;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Gallium arsenide;  Luminescence;  Substrate;  Islands;  Density;  Lasers;  Layer
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.) .Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots ,APPLIED SURFACE SCIENCE,2006 ,252(23):8126-8130
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