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题名: Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate
作者: Zhao L (Zhao Lei);  Zuo YH (Zuo Yuhua);  Cheng BW (Cheng Buwen);  Yu JZ (Yu Jinzhong);  Wang QM (Wang Qiming)
发表日期: 2006
摘要: It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex: layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.
KOS主题词: Energy bands;  Heterostructures;  metallic superlattices;  Alloys;  Relaxation;  Potential scattering;  Thickness;  strain
刊名: JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhao L (Zhao Lei); Zuo YH (Zuo Yuhua); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming) .Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate ,JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2006,22(5):651-654
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