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题名: Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field
作者: Liu YM (Liu Yu-Min);  Yu ZY (Yu Zhong-Yuan);  Yang HB (Yang Hong-Bo);  Huang YZ (Huang Yong-Zhen)
发表日期: 2006
摘要: A systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field.
KOS主题词: strain;  self-organization;  Electronic structure;  finite element;  State
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu YM (Liu Yu-Min); Yu ZY (Yu Zhong-Yuan); Yang HB (Yang Hong-Bo); Huang YZ (Huang Yong-Zhen) .Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field ,ACTA PHYSICA SINICA,2006,55(10):5023-5029
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