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题名: High quality microcrystalline Si films by hydrogen dilution profile
作者: Gu JH (Gu Jinhua);  Zhu MF (Zhu Meifang);  Wang LJ (Wang Liujiu);  Liu FZ (Liu Fengzhen);  Zhou BQ (Zhou Bingqing);  Ding K (Ding Kun);  Li GH (Li Guohua)
发表日期: 2006
摘要: Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.
KOS主题词: Uniformity;  Variability;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Thin;  Alloys;  atomic layer deposition
刊名: THIN SOLID FILMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Gu JH (Gu Jinhua); Zhu MF (Zhu Meifang); Wang LJ (Wang Liujiu); Liu FZ (Liu Fengzhen); Zhou BQ (Zhou Bingqing); Ding K (Ding Kun); Li GH (Li Guohua) .High quality microcrystalline Si films by hydrogen dilution profile ,THIN SOLID FILMS,2006 ,515(2):452-455
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