高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
作者: Jiao YH (Jiao Y. H.);  Wu J (Wu J.);  Xu B (Xu B.);  Jin P (Jin P.);  Hu LJ (Hu L. J.);  Liang LY (Liang L. Y.);  Wang ZG (Wang Z. G.)
发表日期: 2006
摘要: GaAs-based InAs quantum dots using InGaAs composition-graded metamorphic layers have been investigated by molecular beam epitaxy. Emission with the wavelength similar to 1.5 mu m from the dots was obtained at room temperature with the relatively large full width at half maximum. The emission wavelength is relatively stable when subjected to fast annealing. The number density of dots reached similar to 6 x 10(10) cm(-2). Undulated morphology was observed on the surface of the sample, which has some influence on the dot size and distribution. In epilayers, misfit dislocations were confined within the step-graded InGaAs metamorphic buffer layer. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Quantum dots;  atomic layer deposition;  atomic layer deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Gallium arsenide;  emission;  Rangelands;  Range of data;  Islands;  arrays;  Lasers
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
3128.pdf500KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.) .MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2006,35(1):194-198
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Jiao YH (Jiao Y. H.)]的文章
 [Wu J (Wu J.)]的文章
 [Xu B (Xu B.)]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Jiao YH (Jiao Y. H.)]的文章
 [Wu J (Wu J.)]的文章
 [Xu B (Xu B.)]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发