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题名: Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films
作者: Gao HY (Gao Haiyong)
发表日期: 2006
摘要: Gallium nitride (GaN) nanorods were synthesized by nitriding Ga2O3/ZnO films which were deposited in turn on Si (111) substrates using radio frequency (RF) magnetron sputtering system. In the nitridation process, ZnO was reduced to Zn and Zn sublimated at 950 degrees C. Ga2O3 was reduced to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods with the assistance of the sublimation of Zn. The morphology and structure of the nanorods were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The composition of GaN nanorods was studied by Fourier-transform infrared spectrophotometer (FTIR). The synthesized nanorods is hexagonal wurtzite structured. Nitridation time of the samples has an evident influence on the morphology of GaN nanorods synthesized by this method. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Mechanical alloying;  Optical properties;  Semiconductor lasers;  Substrate;  Nanowires;  Layer
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gao HY (Gao Haiyong) .Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2006,35(1):117-120
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