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题名: Electronic structure of InSb quantum ellipsoids in an external magnetic field
作者: Zhu YH (Zhu Y. H.);  Zhang XW (Zhang X. W.);  Xia JB (Xia J. B.)
发表日期: 2006
摘要: The shape dependence of electronic structure, electron g factors in the presence of the external magnetic field of InSb quantum ellipsoids are investigated in the framework of eight-band effective-mass approximation. It is found that as the increasing aspect ratio e, the electron states with P character split into three doublets for the different physical interaction and the light-hole states with S character come up to the top of valence bands at e = 2.6 in comparison with the heavy-hole states. In the presence of the external magnetic field, the energy splits of electron states are different for their wave function distribution direction, and the hole ground state remain optical active for a suitable aspect ratio. The electron g factors of InSb spheres decrease with increasing radius, and have the value of about two for the smallest radius, about -47.2 for sufficiently larger radius, similar to the bulk material case. Actually, the electron g factors decrease as any one of the three dimensions increase. The more dimensions increase, the more g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimensions. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: g-factor;  level structure;  Semiconductors;  Nanocrystals
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhu YH (Zhu Y. H.); Zhang XW (Zhang X. W.); Xia JB (Xia J. B.) .Electronic structure of InSb quantum ellipsoids in an external magnetic field ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2006,35(1):57-63
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