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题名: Electronic structure of ZnO wurtzite quantum wires
作者: Xia JB (Xia J. B.);  Zhanga XW (Zhang X. W.)
发表日期: 2006
摘要: The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm are studied in the framework of six-band effective-mass envelope function theory. The hole effective-mass parameters of ZnO wurtzite material are calculated by the empirical pseudopotential method. It is found that the electron states are either two-fold or four-fold degenerate. There is a dark exciton effect when the radius R of the ZnO quantum wires is in the range of [3,19.1] nm (dark range in our model). The dark ranges of other wurtzite semiconductor quantum wires are calculated for comparison. The dark range becomes smaller when the |Delta(so)| is larger, which also happens in the quantum-dot systems. The linear polarization factor of ZnO quantum wires is larger when the temperature is higher.
KOS主题词: Photoluminescence;  Optical detectors;  Light meters;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Aluminum oxide;  crystal
刊名: EUROPEAN PHYSICAL JOURNAL B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Xia JB (Xia J. B.); Zhanga XW (Zhang X. W.) .Electronic structure of ZnO wurtzite quantum wires ,EUROPEAN PHYSICAL JOURNAL B,2006,49(4):415-420
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