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题名: Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates
作者: Liang S (Liang S.);  Zhu HL (Zhu H. L.);  Wang W (Wang W.)
发表日期: 2006
摘要: The effects of growth temperature on the bimodal size distribution of InAs quantum dots on vicinal GaAs(100) substrates grown by metal organic chemical vapor deposition are studied. An abnormal trend of the bimodal size evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then exhibits a sudden decrease at 535 degrees C. The trend is explained by taking into account the presence of multiatomic steps on the substrates. Photoluminescence (PL) studies show that quantum dots on vicinal substrates have a narrower PL linewidth, a longer emission wavelength, and a larger PL intensity than those of the dots with exact substrates. (c) 2006 American Institute of Physics.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Optical properties;  Chrysanthemum morifolium;  Gallium arsenide;  Surface;  Development;  misalignment;  FABRICATION;  Uniformity;  Variability
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liang S (Liang S.); Zhu HL (Zhu H. L.); Wang W (Wang W.) .Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates ,JOURNAL OF APPLIED PHYSICS,2006 ,100(10):Art.No.103503
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