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题名: ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
作者: Zhao J (Zhao Jie);  Hu LZ (Hu Lizhong);  Wang ZY (Wang Zhaoyang);  Sun J (Sun Jie);  Wang ZJ (Wang Zhijun)
发表日期: 2006
摘要: ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 degrees C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have better crystalline and optical quality and flatter surfaces than the films prepared at other pressures. The full width at half maximum (FWHM) of (0 0 0 2) diffraction peak decreases remarkably from 0.46 to 0.19 degrees with increasing annealing temperature for the film prepared at 0.3 mbar. In photoluminescence (PL) spectra at room temperature, the annealed film at 700 degrees C exhibits a smaller ultraviolet (UV) peak FWHM of 108 meV than the as-grown film (119 meV). However, an enhanced deep-level emission is observed. Possible origins to above results are discussed. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Pulsed laser deposition;  Rapid thermal processing;  Heat treatment;  X-ray crystallography;  Photoluminescence;  ultraviolet emission;  room temperature;  Zinc oxide
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) .ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target ,APPLIED SURFACE SCIENCE ,2006 ,253(2):841-845
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