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题名: Electronic structures of GaAs/AlxGa1-xAs quantum double
作者: Li SS (Li Shu-Shen);  Xia JB (Xia Jian-Bai)
发表日期: 2006
摘要: In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings(QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.
KOS主题词: Gallium arsenide;  Nanostructured materials;  EMT
刊名: NANOSCALE RESEARCH LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li SS (Li Shu-Shen); Xia JB (Xia Jian-Bai) .Electronic structures of GaAs/AlxGa1-xAs quantum double ,NANOSCALE RESEARCH LETTERS,2006,1(2):167-171
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