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题名: Evolution of wetting layer in InAs/GaAs quantum dot system
作者: Chen YH (Chen Y. H.);  Ye XL (Ye X. L.);  Wang ZG (Wang Z. G.)
发表日期: 2006
摘要: For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy-and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy-and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.
KOS主题词: Quantum dots;  Segregation;  Separation
刊名: NANOSCALE RESEARCH LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Wang ZG (Wang Z. G.) .Evolution of wetting layer in InAs/GaAs quantum dot system ,NANOSCALE RESEARCH LETTERS,2006,1(1):79-83
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