高级检索   注册
SEMI OpenIR  > 半导体材料科学中心  > 期刊论文

浏览所有条目

按标题快速跳转
请选择题名首字母 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
输入前几个字母(或汉字)   
按发表日期快速跳转
日期跳转:
 
49条检索结果中的1-20条条目
条数/页:   其他排序方式:
题名作者发表日期▼ 全文
A facile synthesis method for Ni(OH)2 ultrathin nanosheets and their conversion to porous NiO nanosheets used for formaldehyde sensing [期刊论文]Li, Guanghui; Wang, Xuewen; Ding, Haiyan; Zhang, Ting2012
High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films [期刊论文]Feng Zhang; Guosheng Sun; Huolin Huang; Zhengyun Wu; Lei Wang; Wanshun Zhao; Xingfang Liu; Guoguo Yan; Liu Zheng; Lin Dong; Yiping Zeng2011-12
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates [期刊论文]Wei M; Wang XL; Pan X; Xiao HL; Wang CM; Yang CB; Wang ZG2011
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure [期刊论文]Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ; Bi Y; Wang XL; Yang CB2011
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors [期刊论文]Lin DF; Wang XL; Xiao HL; Wang CM; Jiang LJ; Feng C; Chen H; Hou QF; Deng QW; Bi Y; Kang H2011
新型高效太阳能电池研究进展 [期刊论文]赵杰; 曾一平2011
锑化物HEMT器件研究进展 [期刊论文]李彦波; 刘超; 张杨; 曾一平2011
Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展 [期刊论文]赵杰; 刘超; 李彦波; 曾一平2011
An investigation on InxGa1-xN/GaN multiple quantum well solar cells [期刊论文]Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X2011
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy [期刊论文]Pan X; Wang XL; Xiao HL; Wang CM; Yang CB; Li W; Wang WY; Jin P; Wang ZG2011
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions [期刊论文]Jiang LJ; Wang XL; Xiao HL; Wang ZG; Yang CB; Zhang ML2011
Theoretical study on InxGa1-xN/GaN quantum dots solar cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Li JM; Wang ZG; Hou X2011
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Bi Y; Li JM; Wang ZG; Hou X2011
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN [期刊论文]Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG2011
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN [期刊论文]Wang ZG; Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Deng QW; Li JM; Hou X2011
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage [期刊论文]Zhang XB; Wang XL; Xiao HL; Yang CB; Hou QF; Yin HB; Chen H; Wang ZG2011
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition [期刊论文]Wei M; Wang XL; Xiao HL; Wang CM; Pan X; Hou QF; Wang ZG2011
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation [期刊论文]Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW2011
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer [期刊论文]Pan X; Wei M; Yang CB; Xiao HL; Wang CM; Wang XL2011
Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes [期刊论文]Zhang Y (Zhang Yang); Guan M (Guan Min); Liu XF (Liu Xingfang); Zeng YP (Zeng Yiping)2011

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发