中国科学院半导体研究所机构知识库(SEMI OpenIR): 半导体材料科学中心

高级检索注册


	研究部门
	学科主题
	内容类型期刊论文学位论文会议论文专著演示报告成果专利其他
	所有条目
	所有作者

	研究部门
	中国科学... [8691] 中科院半... [1614] 半导体超... [1442] 光电子研... [1028] 集成光电子... [853]
	作者
	中国科学... [1046] wang ... [512] 中国科学院... [427] 李晋闽 [381] 王占国 [339]
	内容类型
	期刊论... [10154] 专利 [2853] 学位论文 [2093] 会议论文 [712] 成果 [108]
	发表日期
	2018 [133] 2017 [470] 2016 [600] 2015 [544] 2014 [683]

SEMI OpenIR > 半导体材料科学中心 > 期刊论文

浏览所有条目

按标题快速跳转

请选择题名首字母 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

输入前几个字母（或汉字）

按发表日期快速跳转

日期跳转：

49条检索结果中的1-20条条目

题名	作者	发表日期▼
条数/页：其他排序方式：

A facile synthesis method for Ni(OH)2 ultrathin nanosheets and their conversion to porous NiO nanosheets used for formaldehyde sensing [期刊论文]	Li, Guanghui; Wang, Xuewen; Ding, Haiyan; Zhang, Ting	2012
High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films [期刊论文]	Feng Zhang; Guosheng Sun; Huolin Huang; Zhengyun Wu; Lei Wang; Wanshun Zhao; Xingfang Liu; Guoguo Yan; Liu Zheng; Lin Dong; Yiping Zeng	2011-12
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates [期刊论文]	Wei M; Wang XL; Pan X; Xiao HL; Wang CM; Yang CB; Wang ZG	2011
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure [期刊论文]	Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ; Bi Y; Wang XL; Yang CB	2011
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors [期刊论文]	Lin DF; Wang XL; Xiao HL; Wang CM; Jiang LJ; Feng C; Chen H; Hou QF; Deng QW; Bi Y; Kang H	2011
新型高效太阳能电池研究进展 [期刊论文]	赵杰; 曾一平	2011
锑化物HEMT器件研究进展 [期刊论文]	李彦波; 刘超; 张杨; 曾一平	2011
Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展 [期刊论文]	赵杰; 刘超; 李彦波; 曾一平	2011
An investigation on InxGa1-xN/GaN multiple quantum well solar cells [期刊论文]	Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X	2011
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy [期刊论文]	Pan X; Wang XL; Xiao HL; Wang CM; Yang CB; Li W; Wang WY; Jin P; Wang ZG	2011
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions [期刊论文]	Jiang LJ; Wang XL; Xiao HL; Wang ZG; Yang CB; Zhang ML	2011
Theoretical study on InxGa1-xN/GaN quantum dots solar cell [期刊论文]	Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Li JM; Wang ZG; Hou X	2011
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell [期刊论文]	Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Bi Y; Li JM; Wang ZG; Hou X	2011
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN [期刊论文]	Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG	2011
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN [期刊论文]	Wang ZG; Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Deng QW; Li JM; Hou X	2011
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage [期刊论文]	Zhang XB; Wang XL; Xiao HL; Yang CB; Hou QF; Yin HB; Chen H; Wang ZG	2011
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition [期刊论文]	Wei M; Wang XL; Xiao HL; Wang CM; Pan X; Hou QF; Wang ZG	2011
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation [期刊论文]	Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW	2011
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer [期刊论文]	Pan X; Wei M; Yang CB; Xiao HL; Wang CM; Wang XL	2011
Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes [期刊论文]	Zhang Y (Zhang Yang); Guan M (Guan Min); Liu XF (Liu Xingfang); Zeng YP (Zeng Yiping)	2011