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题名: Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
作者: Xu Y;  Zhu XP;  Gan QQ;  Song GF;  Cao Q;  Guo, L;  Li YZ;  Chen LH
出版日期: 2005
会议日期: NOV 09-11, 2004
摘要: Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.
会议名称: Conference on Semiconductor and Organic Optoelectronic Materials and Devices
会议文集: SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Xu, Y; Zhu, XP; Gan, QQ; Song, GF; Cao, Q; Guo, L; Li, YZ; Chen, LH .Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation .见:SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2005,5624: 221-225
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