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题名: Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD
作者: Wang, XX;  Zhang, JG;  Wang, QM
出版日期: 2005
会议日期: NOV 29-DEC 02, 2004
摘要: A new metal catalysis-free method of fabricating Si or SiO2 nanowires (NWs) compatible with Si CMOS technology was proposed by annealing SiOx (x < 2) films deposited by plasma -enhanced chemical vapor deposition (PECVD). The effects of the Si content (x value) and thickness of SiOx films, the annealing process and flowing gas ambient on the NW growth were studied in detail. The results indicated that the SiOx film of a thickness below 300 rim with x value close to 1 was most favorable for NW growth upon annealing at 1000-1150 degrees C in the flowing gas mixture of N-2 and H-2. NWs of 50-100nm in diameter and tens of micrometers in length were synthesized by this method. The formation mechanism was likely to be related to a new type of oxide assisted growth (OAG) mechanism, with Si nanoclusters in SiOx films after phase separation serving as the nuclei for the growth of NWs in SiOx films > 200nm, and SiO molecules from thin SiO, film decomposition inducing the NW growth in films < 100nm. An effective preliminary method to control NW growth direction was also demonstrated by etching trenches in SiOx films followed by annealing.
会议名称: Symposium on Group-4 Semiconductor Nanostructures held at the 2004 MRS Fall Meeting
会议文集: Group-IV Semiconductor Nanostructures丛书标题: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang, XX; Zhang, JG; Wang, QM .Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD .见:MATERIALS RESEARCH SOCIETY .Group-IV Semiconductor Nanostructures丛书标题: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,2005,832: 293-298
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