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题名: Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
作者: Zeng, XB;  Liao, XB;  Dai, ST;  Wang, B;  Xu, YY;  Xiang, XB;  Hu, ZH;  Diao, HW;  Kong, GL
出版日期: 2005
会议日期: DEC 07-12, 2003
摘要: Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm(-1),which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev, 1.42ev, 1.47ev. Possible reason for these is suggested.
会议名称: ICMAT Symposium on Science and Technologies of Nanomaterials
KOS主题词: Nanostructured materials;  Porous silicon;  amorphous silicon;  Metric system;  Silicon;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Photography--Films;  Finite volume method;  Nanostructured materials;  Imprisonment;  Development
会议文集: Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zeng, XB; Liao, XB; Dai, ST; Wang, B; Xu, YY; Xiang, XB; Hu, ZH; Diao, HW; Kong, GL .Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires .见:TRANS TECH PUBLICATIONS LTD .Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES ,LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND ,2005,23: 137-140
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