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题名: Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
作者: Kong LM;  Cai JF;  Wu ZY;  Gong Z;  Niu ZC;  Feng ZC
出版日期: 2006
会议日期: NOV 12-14, 2004
摘要: Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.
会议名称: 3rd Asian Conference on Chemical Vapor Deposition
会议文集: THIN SOLID FILMS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Kong, LM; Cai, JF; Wu, ZY; Gong, Z; Niu, ZC; Feng, ZC .Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots .见:ELSEVIER SCIENCE SA .THIN SOLID FILMS,PO BOX 564, 1001 LAUSANNE, SWITZERLAND ,MAR 1 2006,498 (1-2): 188-192
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