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Your requested [Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors] is currently limited to Institute of Semiconductors,Chinese Academy of Sciences internal sharing.


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Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
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