A fair use statement regarding the full text of the request

Your requested [MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料] is currently limited to Institute of Semiconductors,Chinese Academy of Sciences internal sharing.

To solicit author authorization, you need to provide the following information: name, organization, personal e-mail, reason for request. The information you provide will be reviewed and you are committed to the truth of the information provided. The personal information you provide will be protected according to law.


You agree and are willing to abide by the above requirements.