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Your requested [Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors] is currently limited to Institute of Semiconductors,Chinese Academy of Sciences internal sharing.


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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors
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