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Your requested [Fast Homoepitaxial Growth of 4H-SiC Films on 4∘ off-Axis Substrates in a SiH4-C2H4-H2 Systemb InAs quantum well structures] is currently limited to Institute of Semiconductors,Chinese Academy of Sciences internal sharing.


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Fast Homoepitaxial Growth of 4H-SiC Films on 4∘ off-Axis Substrates in a SiH4-C2H4-H2 Systemb InAs quantum well structures
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