SEMI OpenIR

A fair use statement regarding the full text of the request

Your requested [Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD] is currently limited to Institute of Semiconductors,Chinese Academy of Sciences internal sharing.


To solicit author authorization, you need to provide the following information: name, organization, personal e-mail, reason for request. The information you provide will be reviewed and you are committed to the truth of the information provided. The personal information you provide will be protected according to law.

Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD
Refresh

You agree and are willing to abide by the above requirements.