SEMI OpenIR

A fair use statement regarding the full text of the request

Your requested [Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate] is currently limited to Institute of Semiconductors,Chinese Academy of Sciences internal sharing.


To solicit author authorization, you need to provide the following information: name, organization, personal e-mail, reason for request. The information you provide will be reviewed and you are committed to the truth of the information provided. The personal information you provide will be protected according to law.

Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
Refresh

You agree and are willing to abide by the above requirements.