SEMI OpenIR研究单元&专题: 表面物理国家重点实验室https://ir.semi.ac.cn:443/handle/172111/62732024-03-28T08:55:01Z2024-03-28T08:55:01ZMOCVD甲醇做氧源在Si衬底上生长半极性ZnO材料及相关物性研究王俊https://ir.semi.ac.cn:443/handle/172111/206962018-12-04T07:52:43Z2011-06-01T01:25:25Z题名: MOCVD甲醇做氧源在Si衬底上生长半极性ZnO材料及相关物性研究
作者: 王俊2011-06-01T01:25:25Z硅薄膜太阳电池的背反陷光研究肖海波https://ir.semi.ac.cn:443/handle/172111/113032018-12-04T07:56:48Z2010-06-07T07:31:25Z题名: 硅薄膜太阳电池的背反陷光研究
作者: 肖海波2010-06-07T07:31:25ZComparative study of the surface passivation on crystalline silicon by silicon thin films with different structuresZhao LDiao HWZeng XBZhou CLLi HLWang WJZhao, L, Chinese Acad Sci, Inst Elect Engn, Solar Cell Technol Grp, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing 100190, Peoples R China. E-mail Address: zhaolei@mail.iee.ac.cnhttps://ir.semi.ac.cn:443/handle/172111/101982018-12-04T07:57:35Z2010-04-04T07:18:28Z题名: Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures
作者: Zhao L; Diao HW; Zeng XB; Zhou CL; Li HL; Wang WJ; Zhao, L, Chinese Acad Sci, Inst Elect Engn, Solar Cell Technol Grp, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing 100190, Peoples R China. E-mail Address: zhaolei@mail.iee.ac.cn
摘要: Si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (PECVD), and characterized via Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The passivation effect of such different Si thin films on crystalline Si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (mu PCD), for the application in HIT (heterojunction with intrinsic thin-layer) solar cells. The results show that amorphous silicon (a-Si:H) has a better passivation effect due to its relative higher H content, compared with microcrystalline (mu c-Si) silicon and nanocrystalline silicon (nc-Si). Further, it was found that H atoms in the form of Si-H bonds are more preferred than those in the form of Si-H-2 bonds to passivate the crystalline Si surface. (C) 2009 Elsevier B.V. All rights reserved.2010-04-04T07:18:28Z